Enhanced Secondary-Electron Detection of Single-Ion Implants in Silicon through Thin SiO2 Layers,EB Schneider, OG Lloyd-Willard, K Stockbridge, M Ludlow, S Eserin, L Antwis, DC Cox, RP Webb, BN Murdin, SK Clowes; Nano Letters, 26(2), 795-800, (2026) DOI: 10.1021/acs.nanolett.5c05280
Quantifying the Full Damage Profile of Focused Ion Beams via 4D-STEM Precession Electron Diffraction and PSNR Metrics, MG Mateghin, ZP Aslam, AP Brown, MJ Whiting, SK Clowes, RP Webb, DC Cox, Small Methods, e02258, (2026) DOI: 10.1002/smtd.202502258
“Quench rate dependence of the center formation in Er-implanted Si” M.A. Hughes, H. Liu, Y. Dan, Journal of the Optical Society of America B, 43(3), 366-374, (2026) DOI: 10.1364/JOSAB.582175
“Double drift layers to minimize on-resistance in 2.7-kV β-Ga2O3 (001) vertical trench Schottky barrier diodes” S.Charan Vanjari, A.K. Bhat, M.D. Smith, M. Kuball, Applied Physics Letters, 128(10), 103501 (2026) DOI: 10.1063/5.0307807
